With independently developed wafer-cutting machine, and by employing diamond wire cutting technology, the cutting machine has an improved capacity, reduced cost and improved efficiency. The high efficiency polycrystalline wafer is able to have a lower nitrogen oxide and metal impurity concentration, longer minority carrier lifetime, more uniform doping distribution.

High Efficiency polycrystalline wafer:

Conductivity type: P; Resistivity(Ω.cm):1-3; Thickness(μm): ≤30; Margin size(mm): 156.0-156.5; Diagonal size(mm):219.3-219.8; Chamfer dimension(mm):1.4±0.4; Oxygen Content(atoms/cm3):≤1.0x101?; Carbon content(atoms/cm3):≤5.0x1016..